Chinese Physics C > 1997, Vol. 21 > Issue(4): 292-296

Radiation Damage Tests of Silicon Microstrip Detector

Gu Weixin^,

Institute of High Energy Physics,The Chinese Academy of Sciences,Beeijing 1000392 Fermilab,Batavia,ILL 60510,U.S.A.

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Abstract：
This paper measured the plateau curve,height of pulse related with bias voltage of silicon microstrip detector which was before and after exposed,and the leakage current as well as size of ‘black hole’after exposed

References

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P.Michael Tuts,The D0 Upgrade,FERMILAB-Conf-92/276;Presented at the 3rd Intermational Conference on Advanced Technology and Particle Physics,Como,Italy,June 22-26,1992.[2]W.X.Cu et al.,SVX/Silicon Detectors Studies,FERMILAB-Conf-95/351;顾维新等，SVX/硅条探测器的研究，核电子学与探测技术，待发表。[3]顾维新等，硅条探测器及其读出芯片SVX饱和的研究，全国第八届核电子学与探测技术会议，1996,12.

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Gu Weixin. Radiation Damage Tests of Silicon Microstrip Detector[J]. Chinese Physics C, 1997, 21(4): 292-296.

Gu Weixin. Radiation Damage Tests of Silicon Microstrip Detector[J]. Chinese Physics C, 1997, 21(4): 292-296. shu

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Received: 1900-01-01
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Radiation Damage Tests of Silicon Microstrip Detector

Gu Weixin^,

Corresponding author:Gu Weixin,

Institute of High Energy Physics,The Chinese Academy of Sciences,Beeijing 1000392 Fermilab,Batavia,ILL 60510,U.S.A.

Received Date:1900-01-01
Accepted Date:1900-01-01
Available Online:1997-04-05

Abstract:This paper measured the plateau curve,height of pulse related with bias voltage of silicon microstrip detector which was before and after exposed,and the leakage current as well as size of ‘black hole’after exposed