Chinese Physics C > 1993, Vol. 17 > Issue(9): 784-789

The Study of the Silicon Microstrip Detector

Institute of High Energy physios,Beijing 100039Institute of Atomic Energy,Beijing 102413

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Abstract：
A silicon microstrip detector has been fabricated by the new method of planar process.A high-ohmic (～3kΩ.cm)n-doped silicon crystal,oriented in the <111> direction and 400μm thick is used as base material.The sensitive area of the detector (18mm×12mm)is covered with p ⁺implanted diode strips and Al contacts (300 strips,20μm width and 40μm pitch).The leakage current is 5×10 ^－9A at the reverse bias voltage of 100V.The distribution of charge collections of the silicon microstrip detector was measured and 5.3μm of the spatial resolution was obtained.

References

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MAO Yu-Fang, GUO Zhao-Qiao and ZHANG Xiu-Feng. The Study of the Silicon Microstrip Detector[J]. Chinese Physics C, 1993, 17(9): 784-789.

MAO Yu-Fang, GUO Zhao-Qiao and ZHANG Xiu-Feng. The Study of the Silicon Microstrip Detector[J]. Chinese Physics C, 1993, 17(9): 784-789. shu

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Received: 1900-01-01
Revised: 1900-01-01

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

The Study of the Silicon Microstrip Detector

Corresponding author:MAO Yu-Fang,

Institute of High Energy physios,Beijing 100039Institute of Atomic Energy,Beijing 102413

Received Date:1900-01-01

Accepted Date:1900-01-01

Available Online:1993-09-05

Abstract:A silicon microstrip detector has been fabricated by the new method of planar process.A high-ohmic (～3kΩ.cm)n-doped silicon crystal,oriented in the <111> direction and 400μm thick is used as base material.The sensitive area of the detector (18mm×12mm)is covered with p⁺implanted diode strips and Al contacts (300 strips,20μm width and 40μm pitch).The leakage current is 5×10^－9A at the reverse bias voltage of 100V.The distribution of charge collections of the silicon microstrip detector was measured and 5.3μm of the spatial resolution was obtained.

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The Study of the Silicon Microstrip Detector

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