Chinese Physics C > 1996, Vol. 20 > Issue(10): 890-893

Experimental Studies on Using Silicon Photodiode as Read-out Component of CsI (Tl) Crystal

Institute of High Energy Physics,The Chinese Academy of Sciences,Beijing 100039

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Abstract：
In this paper, experimental studies on using silicon photodiode as the read-out component of CsI(Tl) Crystal are reported.The read-out properties of two different types of silicon photodiode produced by Hamamatsu were measured, including relations between energy resolution and bias,shaping time, sensitive area of photodiode and the dimension of the crystal.

References

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He Jingtang, Chen Duanbao, Li Zuhao, Mao Yufang and Dong Xiaoli. Experimental Studies on Using Silicon Photodiode as Read-out Component of CsI (Tl) Crystal[J]. Chinese Physics C, 1996, 20(10): 890-893.

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Received: 1900-01-01
Revised: 1900-01-01

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Experimental Studies on Using Silicon Photodiode as Read-out Component of CsI (Tl) Crystal

Corresponding author:He Jingtang,

Institute of High Energy Physics,The Chinese Academy of Sciences,Beijing 100039

Received Date:1900-01-01

Accepted Date:1900-01-01

Available Online:1996-10-05

Abstract:In this paper, experimental studies on using silicon photodiode as the read-out component of CsI(Tl) Crystal are reported.The read-out properties of two different types of silicon photodiode produced by Hamamatsu were measured, including relations between energy resolution and bias,shaping time, sensitive area of photodiode and the dimension of the crystal.

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Experimental Studies on Using Silicon Photodiode as Read-out Component of CsI (Tl) Crystal

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