Chinese Physics C > 2003, Vol. 27 > Issue(8): 739-743

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Lab of Solid Slate Microstructures, Nanjing Univereity, Nanjing 210093, China2 Institute of High Energy Physics, CAS, Beijing 100039, China3 Center for Condensed Matter Science, Taiwan University, Taipei

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Abstract：
Si/Ge superlattices were grown at low temperature with modified Stranski-Krastanov (SK) MBE method. X-ray specular, off-specular reflectivity, and X-ray transverse scattering measurements were done to characterize the structure of the Ge/Si superlat-tice. The fitted roughness and the thickness of the Ge-layer indicate that Ge may diffuse into Si-layer and form the inverted trapezium or nano-scaled hut at the Si/Ge interface. The inverted trapezium extends to form islands, which can be estimated from the volume of the Ge-Si alloy in the structure. These islands can be averaged as a Ge-Si alloy sub-layer, the averaged thickness was fitted from the pure X-ray specular reflectivity. The composition of Ge in the SiGe dots was estimated as 15%-25% by X-ray specular reflectivity and by the thickness of Ge sub-layer. These results were confirmed by TEM observation.

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WU Xiao-Shan, TAN Wei-Shi, JIANG Shu-Sheng, WU Zhong-Hua, DING Yong-Fan and Microstructures of Ge/Si Superlattices Growtn at Low Temperature[J]. Chinese Physics C, 2003, 27(8): 739-743.

WU Xiao-Shan, TAN Wei-Shi, JIANG Shu-Sheng, WU Zhong-Hua, DING Yong-Fan and Microstructures of Ge/Si Superlattices Growtn at Low Temperature[J]. Chinese Physics C, 2003, 27(8): 739-743. shu

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Received: 2002-11-22
Revised: 1900-01-01

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Corresponding author:WU Xiao-Shan,

Lab of Solid Slate Microstructures, Nanjing Univereity, Nanjing 210093, China2 Institute of High Energy Physics, CAS, Beijing 100039, China3 Center for Condensed Matter Science, Taiwan University, Taipei

Received Date:2002-11-22

Accepted Date:1900-01-01

Available Online:2003-08-05

Abstract:Si/Ge superlattices were grown at low temperature with modified Stranski-Krastanov (SK) MBE method. X-ray specular, off-specular reflectivity, and X-ray transverse scattering measurements were done to characterize the structure of the Ge/Si superlat-tice. The fitted roughness and the thickness of the Ge-layer indicate that Ge may diffuse into Si-layer and form the inverted trapezium or nano-scaled hut at the Si/Ge interface. The inverted trapezium extends to form islands, which can be estimated from the volume of the Ge-Si alloy in the structure. These islands can be averaged as a Ge-Si alloy sub-layer, the averaged thickness was fitted from the pure X-ray specular reflectivity. The composition of Ge in the SiGe dots was estimated as 15%-25% by X-ray specular reflectivity and by the thickness of Ge sub-layer. These results were confirmed by TEM observation.

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Microstructures of Ge/Si Superlattices Growtn at Low Temperature

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