Chinese Physics C > 1998, Vol. 22 > Issue(7): 651-657

EPR Studies on Defect Production and lts Annealing Behavior in Silicon After High Fluence Ar lon lrradiation

Institute of Modern Physics,The Chinese Academy of Sciences,Lanzhou 730000

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Abstract：
Silicon samples were irradiated below 50K with 1 12MeV Ar ions to a fluence of 8×10 ¹⁴/cm ². Defect production and its isochronal annealing behavior have been investigated at room temperature by Electron Paramagnetic Resonance technique. Neutral 4-vacancy (Si-P3 center), positively charged 〈100〉 splitted di-interstitial (Si-P6 center) and the contiuous amorphous layer have been detected in the as-irradiated sample. At an annealing temperature of 200℃ , the Si-P3 and Si-P6 centers were annealed out and five vacancy cluster in negative charge state (Si-P1 center) began to grow. The Si-P1 center disappeared at about 550℃. For the temperature above 350℃, Si-A11 center (a center may include several vacancies) has been observed, which was stable up to 550℃, The temperatue for recrystallization of the continuous amorphous layer is higher than 600℃. During the annealing process, the line shape and line width for amorphous center were not changed. The results are qualitatively discussed.

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Liu Changlong, Hou Mingdong, Cheng Song, Zhu Zhiyong, Wang Zhiguang, Sun Youmei, Jin Yunfan and Li Changlin. EPR Studies on Defect Production and lts Annealing Behavior in Silicon After High Fluence Ar lon lrradiation[J]. Chinese Physics C, 1998, 22(7): 651-657.

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Received: 1900-01-01
Revised: 1900-01-01

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

EPR Studies on Defect Production and lts Annealing Behavior in Silicon After High Fluence Ar lon lrradiation

Corresponding author:Liu Changlong,

Institute of Modern Physics,The Chinese Academy of Sciences,Lanzhou 730000

Received Date:1900-01-01

Accepted Date:1900-01-01

Available Online:1998-07-05

Abstract:Silicon samples were irradiated below 50K with 1 12MeV Ar ions to a fluence of 8×10¹⁴/cm². Defect production and its isochronal annealing behavior have been investigated at room temperature by Electron Paramagnetic Resonance technique. Neutral 4-vacancy (Si-P3 center), positively charged 〈100〉 splitted di-interstitial (Si-P6 center) and the contiuous amorphous layer have been detected in the as-irradiated sample. At an annealing temperature of 200℃ , the Si-P3 and Si-P6 centers were annealed out and five vacancy cluster in negative charge state (Si-P1 center) began to grow. The Si-P1 center disappeared at about 550℃. For the temperature above 350℃, Si-A11 center (a center may include several vacancies) has been observed, which was stable up to 550℃, The temperatue for recrystallization of the continuous amorphous layer is higher than 600℃. During the annealing process, the line shape and line width for amorphous center were not changed. The results are qualitatively discussed.

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EPR Studies on Defect Production and lts Annealing Behavior in Silicon After High Fluence Ar lon lrradiation

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