Chinese Physics C > 2007, Vol. 31 > Issue(10): 933-937

Use of Monte Carlo Method to Evaluate the Response of Direct Conversion X-Ray Detectors

Institute of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China2 Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China

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Abstract：
The response of three semiconductor materials, polycrystalline HgI ₂, amorphous Se and polycrystalline CdTe, used for large area direct conversion detectors, is simulated by Monte Carlo method for X-ray photons in the diagnostic energy range (10—100keV). The simulation involves the transmission spectra, backscatting spectra, absorption efficiency and charge sensitivity. The interaction process between X-ray photons and the conversion materials is simulated by EGSnrc Monte Carlo code system and for the generation of signal charges Gaussian noise and the collection of partial charges are taken into account. The results show that deep traps in materials can affect largely detecting sensitivity when the mean free length (Schubweg) of carriers is less than the materials thickness. The sensitivity of HgI ₂is 5 times higher than that of amorphous Se and CdTe is 10 times higher than amorphous Se, it can be seen that a high Z material can improve the detecting sensitivity greatly.

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GUI Jian-Bao, GUO Jin-Chuan, YANG Qin-Lao and NIU Han-Ben. Use of Monte Carlo Method to Evaluate the Response of Direct Conversion X-Ray Detectors[J]. Chinese Physics C, 2007, 31(10): 933-937.

GUI Jian-Bao, GUO Jin-Chuan, YANG Qin-Lao and NIU Han-Ben. Use of Monte Carlo Method to Evaluate the Response of Direct Conversion X-Ray Detectors[J]. Chinese Physics C, 2007, 31(10): 933-937. shu

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Received: 2006-12-05
Revised: 2007-03-09

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Use of Monte Carlo Method to Evaluate the Response of Direct Conversion X-Ray Detectors

Corresponding author:GUI Jian-Bao,

Institute of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China2 Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China

Received Date:2006-12-05

Accepted Date:2007-03-09

Available Online:2007-10-05

Abstract:The response of three semiconductor materials, polycrystalline HgI₂, amorphous Se and polycrystalline CdTe, used for large area direct conversion detectors, is simulated by Monte Carlo method for X-ray photons in the diagnostic energy range (10—100keV). The simulation involves the transmission spectra, backscatting spectra, absorption efficiency and charge sensitivity. The interaction process between X-ray photons and the conversion materials is simulated by EGSnrc Monte Carlo code system and for the generation of signal charges Gaussian noise and the collection of partial charges are taken into account. The results show that deep traps in materials can affect largely detecting sensitivity when the mean free length (Schubweg) of carriers is less than the materials thickness. The sensitivity of HgI₂is 5 times higher than that of amorphous Se and CdTe is 10 times higher than amorphous Se, it can be seen that a high Z material can improve the detecting sensitivity greatly.

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Use of Monte Carlo Method to Evaluate the Response of Direct Conversion X-Ray Detectors

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