Chinese Physics C > 2008, Vol. 32 > Issue(S2): 255-258

Surface morphology of He-implanted single-crystalline silicon

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Abstract：
Single-crystalline Si (100) samples were implanted with 30 keV He²⁺ions to doses ranging from 2.0×10¹⁶to 2.0×10¹⁷ions /cm²and subsequently thermally annealed at 800℃ for 30min. The morphological change of the samples with the increase of implantation dose was investigated using atomic force microscopy (AFM). It was found that oblate-shaped blisters with an average height around 4.0nm were found on the 2.0×10¹⁶ions /cm²implanted sample surface; spherical-shaped blisters with an average height around 10.0nm were found on the 5.0×10¹⁶ions /cm²implanted sample surface; strip-shaped and conical cracks were observed on the sample He-implanted to a dose of 1.0×10¹⁷ions /cm². Exfoliations occurred on the sample surface to a dose of 2.0×10¹⁷ions /cm². Mechanisms underlying the surface change were discussed.

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LI Bing-Sheng, ZHANG Chong-Hong, ZHOU Li-Hong and YANG Yi-Tao. Surface morphology of He-implanted single-crystalline silicon[J]. Chinese Physics C, 2008, 32(S2): 255-258.

LI Bing-Sheng, ZHANG Chong-Hong, ZHOU Li-Hong and YANG Yi-Tao. Surface morphology of He-implanted single-crystalline silicon[J]. Chinese Physics C, 2008, 32(S2): 255-258. shu

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Received: 2008-07-17
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Surface morphology of He-implanted single-crystalline silicon

Corresponding author:LI Bing-Sheng,

Received Date:2008-07-17
Accepted Date:1900-01-01
Available Online:2008-01-03

Abstract:Single-crystalline Si (100) samples were implanted with 30 keV He²⁺ions to doses ranging from 2.0×10¹⁶to 2.0×10¹⁷ions /cm²and subsequently thermally annealed at 800℃ for 30min. The morphological change of the samples with the increase of implantation dose was investigated using atomic force microscopy (AFM). It was found that oblate-shaped blisters with an average height around 4.0nm were found on the 2.0×10¹⁶ions /cm²implanted sample surface; spherical-shaped blisters with an average height around 10.0nm were found on the 5.0×10¹⁶ions /cm²implanted sample surface; strip-shaped and conical cracks were observed on the sample He-implanted to a dose of 1.0×10¹⁷ions /cm². Exfoliations occurred on the sample surface to a dose of 2.0×10¹⁷ions /cm². Mechanisms underlying the surface change were discussed.