Chinese Physics C > 2006, Vol. 30 > Issue(7): 665-669

Study of the Compensation Voltage on the Boundary Field Layer of the BES III Drift Chamber

Institute of High Energy Physics, CAS, Beijing 100049, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

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Abstract：
There exists strong left-right asymmetry of the X-T relation in the boundary cell of the BESⅢ drift chamber. The simulation indicates that this kind of asymmetry can be reduced by applying compensation voltage on the boundary field layer, which is confirmed in a beam test for a prototype chamber. The impact of the compensation voltage of the boundary cell on the spacial resolution and the d E/dx measurement is reported in this paper.

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WU Ling-Hui, LIU Jian-Bei, QIN Zhong-Hua, CHEN Chang, ZHUANG Bao-An, CHEN Yuan-Bo, WANG Yi-Fang, JIN Yan, LIU Rong-Guang, MA Xiao-Yan, Ma Yuan-Yuan, TANG Xiao, Study of the Compensation Voltage on the Boundary Field Layer of the BES III Drift Chamber[J]. Chinese Physics C, 2006, 30(7): 665-669.

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Received: 2005-10-18
Revised: 2005-11-22

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Study of the Compensation Voltage on the Boundary Field Layer of the BES III Drift Chamber

Corresponding author:WU Ling-Hui,

Institute of High Energy Physics, CAS, Beijing 100049, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Received Date:2005-10-18

Accepted Date:2005-11-22

Available Online:2006-07-05

Abstract:There exists strong left-right asymmetry of the X-T relation in the boundary cell of the BESⅢ drift chamber. The simulation indicates that this kind of asymmetry can be reduced by applying compensation voltage on the boundary field layer, which is confirmed in a beam test for a prototype chamber. The impact of the compensation voltage of the boundary cell on the spacial resolution and the dE/dx measurement is reported in this paper.

Study of the Compensation Voltage on the Boundary Field Layer of the BES III Drift Chamber

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通讯作者:陈斌, bchen63@163.com

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Study of the Compensation Voltage on the Boundary Field Layer of the BES III Drift Chamber

Corresponding author:WU Ling-Hui,

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