Chinese Physics C > 2001, Vol. 25 > Issue(6): 588-594

Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

Institute of High Energy Physics, CAS, Beijing 100039,China1 Surface Physics National Key Lab., Fudan University, Shanghai 200433,China

Abstract
HTML
Reference
Related

PDF

Abstract：
The X ray standing wave experiment method is established with the double-crystal monochromator and precision 2-circle goniometer at Beijing Synchrotron Radiation Facility. It is used combined with the X-ray diffraction, to investigate the heterostructure of super thin Ge atomic layer within Si crystals. The results show that the Ge _xSi _1－xalloy layer with average x=0.13 was formed in the Si crystal sample due to the segregation of Ge atoms during the preparation. Due to the diffusion of Ge atoms to the crystal surface, the Ge _xSi _1－xalloy layer was disappeared and nearly pure Ge layer was formed on the Si crystal surface after annealing at 650℃.

References

[1]

. Batterman B W,Cole H.Rev.Mod.Phys.,1964,36:6812. Zegenhagen J.Surf.Sci.Rep.,1993,18:1993. Bedzyk M J,Bilderback D H,Bommarito G M et al.Science,1988,241:17884. Bedzyk M J,Bommarito G M,Schildkaut J S.Phys.Rev.Lett.,1989,62:13765. Woodruff D P.Progress in Surface Science,1998,57:16. Warren B E.X-Ray Diffraction.New York:Dover Publications,Inc.,19907. Matsushita T,Hashizume H.In Handbook of Synchrotron Radiation,ed.E.Koch,North Holland Publishing Company,Amsterdam,New York,Oxford,1983,Chapter 4,X-Ray Monochromator. 261—3148. JIA Quan-Jie,ZHENG Wen-Li,WANG Zhou-Guang et al.Acta Physica Sinica(overseas edition),1998,7:695—7029. ZHENG Wen-Li.The Performance of 4W1C Beamline at Beijing Synchrotron Radiation Facility and the Study of Ge Thin Heterostructures in Si Crystal by Synchrotron Radiation.MS thesis(in Chinese)2000(郑文莉.北京同步辐射装置4W1C光束线的性能研究及Si中Ge薄层结构的同步辐射研究.硕士论文.2000)

[1]	MENG Zhi-Peng,ZHANG Zi-Cheng,YANG Han-Wu,QIAN Bao-Liang. Applications of Semiconductor Switches in Pulsed Power Technology. Chinese Physics C, 2008, 32(S1): 277-279.
[2]	ZHOU Hai-Tao,TAO Ye,LIU Tao,LI Gang,ZHU Man-Kang. Set-Up of Magnetic Circular Dichroism of Hard X-Rays Range at Beijing Synchrotron Radiation Laboratory. Chinese Physics C, 2006, 30(10): 1022-1026.
[3]	CHEN Dong-Liang,WU Zi-Yu,WEI Shi-Qiang. MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in a-SiO₂Matrix. Chinese Physics C, 2006, 30(5): 476-480.
[4]	SHEN Da-Wa,YU Hui,WU Zong-Hua,HUANG Yong. The Morphology of CDA-g-PMMA Copolymers in Solution Studied by SR-SAXS. Chinese Physics C, 2005, 29(S1): 8-11.
[5]	XU Qing,WEI Xiang-Jun,HUANG Yu-Ying,HE Wei. Grazing Exit X-Ray Fluorescence Spectroscopy. Chinese Physics C, 2005, 29(S1): 80-83.
[6]	CHU Wang-Sheng,WU Zi-Yu,LIU Wen-Han. XANES Study of Hg Sorption Products on Montmorillonite at High Temperatures. Chinese Physics C, 2005, 29(S1): 84-88.
[7]	HUANG Zhi-Feng,LI Zheng,KANG Ke-Jun,ZHU Pei-Ping,YUAN Qing-Xi,HUANG Wan-Xia,WANG Jun-Yue,LI Gang,ZHANG Di,YU Ai-Min. Study on Extraction Method of Phase Information in X-Ray Diffraction Enhanced Imaging. Chinese Physics C, 2005, 29(S1): 133-136.
[8]	CHEN Jun,WANG Jian-Feng,ZHANG Ji-Cai,WANG Hui,HUANG Yong,WANG Yu-Tian,YANG Hui,JIA Quan-Jie. Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation. Chinese Physics C, 2005, 29(S1): 37-39.
[9]	YAN Sheng-Quan,GUO An-Qiao,LIAN Gang,LIU Wei-Ping,LI Zhi-Hong,BAI Xi-Xiang,WANG Bao-Xiang,ZENG Sheng,GUO Bing. Development of Multi-Ring Semiconductor Detectors. Chinese Physics C, 2005, 29(7): 677-681.
[10]	XU Chang,REN Zhong-Zhou. Study on the Unfavored α-Decay Lifetimes around a Closed Shell. Chinese Physics C, 2004, 28(5): 502-506.
[11]	TAN Ji-Lian,WANG Xiao-Bing,WANG Shi-Jin,ZHU Guang-Wu,LU Zi-Wei,ZHANG Jin-Xia,LI Cun-Fan,WANG Zhu-Sheng,BAO Zhi-Qin,LIANG Jin-Bao,SHEN Si-Zhong,GAO Ping. Semiconductor Charged Particle Detector and Its Application in Space Physical Science. Chinese Physics C, 2003, 27(2): 150-153.
[12]	SU Run,LIU Feng-Qin,QIAN Hai-Jie. Study of Electronic Structure of Ultrathin Co Films Epitaxially Grown on Cu (111) by Angle-Resolved Photoemission Spectroscopy. Chinese Physics C, 2003, 27(2): 178-182.
[13]	HONG Xin-Guo,DU Lu-Chao,YE Man-Ping,WENG Yu-Xiang,LI Ming. In Situ Synchrotron Small Angle X-ray Scattering Studies of TiO₂Colloid at Elevated Temperature. Chinese Physics C, 2003, 27(S1): 63-66.
[14]	LIU Hua-Feng,BAO Chao. Design of a γ-Ray Imaging System for Plant Studies. Chinese Physics C, 2002, 26(2): 192-196.
[15]	LEI Sheng-Bin,WANG Jun,DONG Yu-Hui,XU Sai-Long,XU Shan-Dong,ZENG Qing-Dao,WANG Chen,BAI Chun-Li. XRD Investigation of Self-Assembly and LB Films of Substituted Phthalocyanine and Porphyrin. Chinese Physics C, 2001, 25(S1): 85-89.
[16]	ZHENG Wen-Li,JIA Quan-Jie,JIANG Xiao-Ming,JIANG Zui-Min. Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection. Chinese Physics C, 2001, 25(12): 1231-1237.
[17]	Jiang Jianhua,Wang Zhouguang,Tian Yulian,Wang Gongli,Zhao Yang,Cao Mang,Li Dacheng,,. Study of X-Ray Interference Using Synchrotron Radiation. Chinese Physics C, 1998, 22(8): 763-767.
[18]	Le Yi,Li Cheng,Chen Hongfang,Zhang Yongming,Wang Xiaolian,Wang Ligang,Shao Chuanfen,Shi Changxin. Properties of a New Kind of MSM Structure Gallium Arsenide Detectors. Chinese Physics C, 1998, 22(12): 1092-1099.
[19]	CHEN Zhi-Qian,ZHENG Ren-Rong,YIN Chuan-Zong. Mossbauer Study of GdBa₂Cu₃O_7－δ. Chinese Physics C, 1992, 16(5): 385-389.
[20]	ZHANG Duan-Ming,LI Guo-Yuan,WANG Jian-An,HE Yuan-Jin. POSITRON ANNIHILATION STUDY OF PHASE TRANSITION IN HIGH-TEMPERATURE SUPERCONDUCTOR Y-Ba-Cu-O. Chinese Physics C, 1989, 13(9): 769-771.

Access

Get Citation

JIANG Xiao-Ming, JIA Quan-Jie, HU Tian-Dou, HUANG Yu-Ying, ZHENG Wen-Li, HE Wei, XIAN Ding-Chang, SHI Bin, JIANG Zui-Min and WANG Xun. Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique[J]. Chinese Physics C, 2001, 25(6): 588-594.

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2000-05-26
Revised: 1900-01-01

Article Metric

Article Views(4961)
PDF Downloads(616)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者:陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

Corresponding author:JIANG Xiao-Ming,

Institute of High Energy Physics, CAS, Beijing 100039,China1 Surface Physics National Key Lab., Fudan University, Shanghai 200433,China

Received Date:2000-05-26

Accepted Date:1900-01-01

Available Online:2001-06-05

Abstract:The X ray standing wave experiment method is established with the double-crystal monochromator and precision 2-circle goniometer at Beijing Synchrotron Radiation Facility. It is used combined with the X-ray diffraction, to investigate the heterostructure of super thin Ge atomic layer within Si crystals. The results show that the Ge_xSi_1－xalloy layer with average x=0.13 was formed in the Si crystal sample due to the segregation of Ge atoms during the preparation. Due to the diffusion of Ge atoms to the crystal surface, the Ge_xSi_1－xalloy layer was disappeared and nearly pure Ge layer was formed on the Si crystal surface after annealing at 650℃.

HTML

Reference (1)

Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

Abstract：

References

Access

Article Metrics

Metrics

通讯作者:陈斌, bchen63@163.com

Email This Article