Chinese Physics C > 2002, Vol. 26 > Issue(12): 1309-1315

Backward Compton Scattering γ-Ray Source Based on Synchrotron Radiation Facility (Ⅱ) Numerical Calculation of GeV γ-Ray Production

Shanghai Institute of Nuclear Research, CAS, Shanghai 201800, China

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Abstract：
We propose to build a GeV γ-ray beam line, Shanghai laser Electron Gamma Source-Ⅱ (SLEGS-Ⅱ), at the Shanghai Synchrotron Radiation Facility (SSRF). By Backward Compton Scattering (BCS) of ultraviolet laser from 3.5 GeV electrons of SSRF, high intense quasi-monochromatic BCS γ-rays with high linear or circular polarization ranging 300-870MeV will be produced. In this paper, we present the outline of SLEGS-Ⅱ and the properties of BCS γ-ray with numerical computation based on the major parameters of SSRF storage ring. The selection of interaction region and tagging position is discussed.

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CAI Xiang-Zhou, GU Jia-Hui, GUO Wei and SHEN Wen-Qing. Backward Compton Scattering γ-Ray Source Based on Synchrotron Radiation Facility (Ⅱ) Numerical Calculation of GeV γ-Ray Production[J]. Chinese Physics C, 2002, 26(12): 1309-1315.

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Received: 2002-01-10
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Backward Compton Scattering γ-Ray Source Based on Synchrotron Radiation Facility (Ⅱ) Numerical Calculation of GeV γ-Ray Production

Corresponding author:CAI Xiang-Zhou,

Shanghai Institute of Nuclear Research, CAS, Shanghai 201800, China

Received Date:2002-01-10
Accepted Date:1900-01-01
Available Online:2002-12-05

Abstract:We propose to build a GeV γ-ray beam line, Shanghai laser Electron Gamma Source-Ⅱ (SLEGS-Ⅱ), at the Shanghai Synchrotron Radiation Facility (SSRF). By Backward Compton Scattering (BCS) of ultraviolet laser from 3.5 GeV electrons of SSRF, high intense quasi-monochromatic BCS γ-rays with high linear or circular polarization ranging 300-870MeV will be produced. In this paper, we present the outline of SLEGS-Ⅱ and the properties of BCS γ-ray with numerical computation based on the major parameters of SSRF storage ring. The selection of interaction region and tagging position is discussed.