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Abstract:
A method of experimental determination of the sensitive volume(S
v)thickness d of micro-electronic devices is presented. It is based upon the deconvolution of the functions of heavy ion upset cross sections versus the range of the incidentions σ
seu(r), measured by varying the ion energy, and LET(r). The measured σ
seu(LET) and d can be used for accurate prediction of the rate of Single Event Effects (SEE) in space.

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