Chinese Physics C > 2008, Vol. 32 > Issue(S2): 265-269

Study of surface exfoliation on crystalline silicon induced by Co-implantation of He and H ions

Abstract
HTML
Reference
Related

PDF

Abstract：
Crystalline n-type Si (100) wafers were implanted at room temperature with
160 keV He ions to a fluence of 5×10¹⁶cm^－2or 40 keV H ions to a fluence of 1×10¹⁶cm^－2, singly or in combination, followed by thermal annealing. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) have been used to investigate ion implantation induced surface phenomena and thermal evolution of micro-defects. SEM results show that successive implantation of He and H ions could induce surface blistering and exfoliation of Si at high thermal annealing temperature. AFM observations reveal that the surface exfoliation is mainly achieved at the sample depth corresponding to the projected range of H ions. XTEM observations demonstrate that the occurrence of surface blister or exfoliation on silicon can be attributed to the important role of He implantation in the thermal growth of H induced defects.

References

[1]

. Bruel M. Electronics Letters, 1995, 31(14): 12012. Gosele U, Stenzel H, Martini T et al. Appl. Phys. Lett.,1995, 67(24): 36143. Radu I, Szafraniak I, Scholz R et al. J. Appl. Phys., 2003,94(12): 78204. Celler G K, Cristoloveanu S. J. Appl. Phys., 2003, 93(9):49555. Nguyen P, Bourdelle K K, Maurice T et al. J. Appl. Phys.,2007, 101: 0335066. Agarwal A, Haynes T E, Venezia V C et al. Appl. Phys.Lett., 1998, 72(9): 10867. WANG Z, LIU C L, LIU T Y et al. Nucl. Instrum. Meth-sods B, 2007, 266(2): 2508. Ziegler J P, Biersack J P, Littmark U. The Stopping andRange of Ions in Solids. New York: Pergamon, 19859. Corni F, Calzolzri G, Frabboni S et al. J. Appl. Phys., 1999,85(3): 140110. Brusa R S, Karwasz G P, Zecca A et al. J. Appl. Phys.,1999, 85(4): 239011. Frabboni S, Corni F, Nobili C et al. Phys. Rev., 2004, B69:16520912. Evans J H. Nucl. Instrum. Methsods B, 2002, 196(1-2):12513. Moutanabbir O, Terreault B. Appl. Phys. Lett., 2005, 86:05190614. Weldon M K, Marsico V E, Chabal Y J et al. J. Vac. Sci.Technol., 1997, B15(4): 106515. Godey S, Sauvage T, Ntsoenzok E et al. J. Appl. Phys.,2000, 87(5): 2158

[1]	S. A. Alavi,V. Dehghani. Alpha-induced reaction cross-section for Sm, U, Np targets: influence of hexadecapole deformation and deformed surface diffuseness. Chinese Physics C, 2017, 41(6): 064104.doi:10.1088/1674-1137/41/6/064104
[2]	Zhen-Jie Li,Yun-Cong Jia,Ling-Fei Hu,Peng Liu,Hua-Xiang Yin. Study of silicon pixel sensor for synchrotron radiation detection. Chinese Physics C, 2016, 40(3): 036001.doi:10.1088/1674-1137/40/3/036001
[3]	LIU Xing-Xing,ZHANG Gao-Long,ZHANG Huan-Qiao. Study of fusionQ-value rule in sub-barrier fusion of heavy ions. Chinese Physics C, 2015, 39(7): 074101.doi:10.1088/1674-1137/39/7/074101
[4]	LI Hai-Xia,LI Zhan-Kui,WANG Fang-Cong,LI Rong-Hua,CHEN Cui-Hong,WANG Xiu-Hua,RONG Xin-Juan,LIU Feng-Qiong,WANG Zhu-Sheng,LI Chun-Yan,ZU Kai-Ling,LU Zi-Wei. Application of stratified implantation for silicon micro-strip detectors. Chinese Physics C, 2015, 39(6): 066005.doi:10.1088/1674-1137/39/6/066005
[5]	HAN Jian-Long,MA Jun-Bing,CAO Xi-Guang,WANG Qi,WANG Jian-Song,YANG Yan-Yun,MA Peng,HUANG Mei-Rong,JIN Shi-Lun,RONG Xin-Juan,BAI Zhen,FU Fen,HU Qiang,CHEN Ruo-Fu,XU Shi-Wei,CHEN Jiang-Bo,JIN Lei,LI Yong,ZHAO Ming-Hui,XU Hu-Shan. Performance of a double sided silicon strip detector as a transmission detector for heavy ions. Chinese Physics C, 2014, 38(5): 056202.doi:10.1088/1674-1137/38/5/056202
[6]	WU Feng,WANG Huan-Yu,ZHAO Xiao-Yun,MENG Xiang-Cheng,XU Yan-Bing,WANG Hui,MA Yu-Qian,LU Hong,WANG Ping,SHI Feng,LI Xin-Qiao,JIANG Wen-Qi,AN Zhen-Hua,YU Xiao-Xia,LIU Han-Yi. Design and performance study of the LEPD silicon tracker onboard the CSES satellite. Chinese Physics C, 2013, 37(2): 026004.doi:10.1088/1674-1137/37/2/026004
[7]	WANG Zhuo,GAO Yu-Jie,LI Meng-Kai,ZHU Fei,ZHANG Da-Cheng,LIU Chang-Long. He and H sequential implantation induced surface blistering and exfoliation of Si covered with oxide layer. Chinese Physics C, 2013, 37(1): 016001.doi:10.1088/1674-1137/37/1/016001
[8]	LI Lei,YUE Qian,TANG Chang-Jian,CHENG Jian-Ping,KANG Ke-Jun,LI Jian-Min,LI Jin,LI Yu-Lan,LI Yuan-Jing,MA Hao,XUE Tao,ZENG Zhi,. A Monte Carlo study for the shielding ofγbackgrounds induced by radionuclides for CDEX. Chinese Physics C, 2011, 35(3): 282-287.doi:10.1088/1674-1137/35/3/013
[9]	WU Qing-Biao,WANG Qing-Bin,WU Jing-Min,MA Zhong-Jian. Study on induced radioactivity of China Spallation Neutron Source. Chinese Physics C, 2011, 35(6): 596-602.doi:10.1088/1674-1137/35/6/017
[10]	TIAN Kai,CAO Zhou,XUE Yu-Xiong,YANG Shi-Yu. Comparison study of the charge density distribution induced by heavy ions and pulsed lasers in silicon. Chinese Physics C, 2010, 34(1): 148-151.doi:10.1088/1674-1137/34/1/028
[11]	CHEN Hong-Fei,ZOU Ji-Qing,SHI Wei-Hong,ZOU Hong,HU Ran-Sheng,TIAN Da-Yu. Thermal experiment of silicon PIN detector. Chinese Physics C, 2008, 32(10): 820-824.doi:10.1088/1674-1137/32/10/011
[12]	LI Bing-Sheng,ZHANG Chong-Hong,ZHOU Li-Hong,YANG Yi-Tao. Surface morphology of He-implanted single-crystalline silicon. Chinese Physics C, 2008, 32(S2): 255-258.
[13]	LIU Chang-Long. Effects of Hydrogen Plasma Treatment on Cavity Formation in Silicon Induced by He Ion Implantation. Chinese Physics C, 2005, 29(5): 524-529.
[14]	LIU Chang-Long. Effects of Ion Irradiation on the Diffusion of Pre-implanted B Atoms in Crystalline Silicon. Chinese Physics C, 2001, 25(12): 1238-1244.
[15]	Zhu Zhiyong,Hou Mingdong,Jin Yunfan,Li Changlin,Liu Changlong,Zhang Chonghong,Sun Youmei. Study of Defects in Silicon Irradiated With High Energy Ar Ions. Chinese Physics C, 1999, 23(12): 1248-1252.
[16]	Zhai Pengji,Feng Songlin,Zhang Ying,Tang Xiaowei,Liu Jie,Hou Mingdong,Liu Changlong,Wu Ji,Wang Chen,Shang Guangyi,Bai Chunli. Observation of the Damage on HOPG Surface Induced by Ar⁺⁸Ions. Chinese Physics C, 1999, 23(6): 579-583.
[17]	Tan Jilian,Zhang Jinxia,Jin Genming,Zhang Huanqiao,Qian Xing,Liu Zuhua,Xu Jincheng. Bi-dimension Position Sensitive Detector Used in the Study of Fusion Fission of Heavy Ions at the Sub-Coulomb Barrier Energy Region. Chinese Physics C, 1997, 21(S2): 1-8.
[18]	Li Wenxin,Li Yunsheng,Sun Rulin,Sun Tongyu,Wu Dingqing,Zhao Lili,Zheng Yuming,Qi Dahai,Sa Benhao. A Study of the Target Residues from the Interaction of¹⁸¹Ta with 45 MeV/A¹²C Ions. Chinese Physics C, 1991, 15(S4): 337-340.
[19]	Li Wenxin,Sun Tongyu,Sun Rulin,Wu Dingqing,Zhao Lili,Jing Genming,Qi Dahai,Sa Benhao. Study on Target Residues from the Interaction of Copper with 44 MeV/A¹²C Ions. Chinese Physics C, 1990, 14(S4): 417-426.
[20]	Jiang Huanqing,Li Yangguo. Surface Production ofηParticles inπ-A Collisions. Chinese Physics C, 1988, 12(S4): 387-392.

Access

Get Citation

WANG Zhuo, LIU Chang-Long, LIU Tian-Yu, WU Pei, ZHANG Xiao-Dong, LI Wen-Xia, LI Meng-Kai, YUAN Bing and LI Wen-Run. Study of surface exfoliation on crystalline silicon induced by Co-implantation of He and H ions[J]. Chinese Physics C, 2008, 32(S2): 265-269.

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2008-07-17
Revised: 1900-01-01

Article Metric

Article Views(4639)
PDF Downloads(585)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者:陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Study of surface exfoliation on crystalline silicon induced by Co-implantation of He and H ions

Corresponding author:WANG Zhuo,

Received Date:2008-07-17

Accepted Date:1900-01-01

Available Online:2008-01-03

Abstract:Crystalline n-type Si (100) wafers were implanted at room temperature with
160 keV He ions to a fluence of 5×10¹⁶cm^－2or 40 keV H ions to a fluence of 1×10¹⁶cm^－2, singly or in combination, followed by thermal annealing. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) have been used to investigate ion implantation induced surface phenomena and thermal evolution of micro-defects. SEM results show that successive implantation of He and H ions could induce surface blistering and exfoliation of Si at high thermal annealing temperature. AFM observations reveal that the surface exfoliation is mainly achieved at the sample depth corresponding to the projected range of H ions. XTEM observations demonstrate that the occurrence of surface blister or exfoliation on silicon can be attributed to the important role of He implantation in the thermal growth of H induced defects.

HTML

Reference (1)

Study of surface exfoliation on crystalline silicon induced by Co-implantation of He and H ions

Abstract：

References

Access

Article Metrics

Metrics

通讯作者:陈斌, bchen63@163.com

Email This Article