Chinese Physics C > 2002, Vol. 26 > Issue(9): 904-908

Single Event Effects Induced by 15.14 MeV/u¹³⁶Xe Ions

Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China2 Institute of Aerospace Computer Technology, China Aerospace Science and Technology Corporation, Shanghai 200050, China

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Abstract：
Single event effects induced by 15.14MeV/u ¹³⁶Xe ions in different batches of 32k×8 bits static random access memory are studied. The incident angle dependences of the cross sections for single event upset and single event latchup are presented. The SEE cross sections are plotted versus energy loss instead of linear energy transfer value in sensitive region. The depth of sensitive volume and thickness of "dead" layer above the sensitive volume are estimated.

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HOU Ming-Dong, ZHANG Qing-Xiang, LIU Jie, WANG Zhi-Guang, JIN Yun-Fan, ZHU Zhi-Yong, ZHEN Hong-Lou, LIU Chang-Long, CHEN Xiao-Xi, WEI Xin-Guo, ZHANG Lin, FAN You-Cheng, Single Event Effects Induced by 15.14 MeV/u ¹³⁶Xe Ions[J]. Chinese Physics C, 2002, 26(9): 904-908.

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Received: 2001-10-09
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Single Event Effects Induced by 15.14 MeV/u¹³⁶Xe Ions

Corresponding author:HOU Ming-Dong,

Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China2 Institute of Aerospace Computer Technology, China Aerospace Science and Technology Corporation, Shanghai 200050, China

Received Date:2001-10-09

Accepted Date:1900-01-01

Available Online:2002-09-05

Abstract:Single event effects induced by 15.14MeV/u¹³⁶Xe ions in different batches of 32k×8 bits static random access memory are studied. The incident angle dependences of the cross sections for single event upset and single event latchup are presented. The SEE cross sections are plotted versus energy loss instead of linear energy transfer value in sensitive region. The depth of sensitive volume and thickness of "dead" layer above the sensitive volume are estimated.

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Single Event Effects Induced by 15.14 MeV/u¹³⁶Xe Ions

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