Chinese Physics C > 2003, Vol. 27 > Issue(S1): 118-121

X-ray Lithography Technology for the Fabrication of Deep-submicron T-shaped Gate

Microelectronics R&D Center,CAS,Beijing 100029,China2 Synchrotron Radiation Laboratory,Institute of High Energy Physics,CAS,Beijing 100039,China

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Abstract：
Because of its validity in reducing transistor noise due to gate parasitic resistance,T-shaped structure has been applied for the fabrication of Pseudomorphic High Electron Mobility Transistor (PHEMT) device widely,X-ray lithography is the best way to fabricate deep-submicron T-shaped structure,because it has many adantages,such as large process latitude、high throughput,extremely long depth of focus、large exposure field sizes,low cost,and so on,and the more important thing is that X-ray lithography technology is relatively mature.In this paper,the home-made X-ray mask process is introduced first,and the influence of blur to the light intensity distribution on the surface of X-ray resist is analyzed,the three layer resist method which is used for the fabrication of deep-submicron T-shaped structure and the 75nm T-shaped structure result which was achieved in BSRF 3B1A beamline are presented lastly.

References

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XIE Cheng-Qing, CHEN Da-Peng, LI Bing, WANG De-Qiang, YE Tian-Chun, PENG Liang-Qiang, YI Fu-Ting, HAN Yong and ZHANG Ju-Fang. X-ray Lithography Technology for the Fabrication of Deep-submicron T-shaped Gate[J]. Chinese Physics C, 2003, 27(S1): 118-121.

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Received: 2003-11-21
Revised: 1900-01-01

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

X-ray Lithography Technology for the Fabrication of Deep-submicron T-shaped Gate

Corresponding author:XIE Cheng-Qing,

Microelectronics R&D Center,CAS,Beijing 100029,China2 Synchrotron Radiation Laboratory,Institute of High Energy Physics,CAS,Beijing 100039,China

Received Date:2003-11-21

Accepted Date:1900-01-01

Available Online:2003-01-02

Abstract:Because of its validity in reducing transistor noise due to gate parasitic resistance,T-shaped structure has been applied for the fabrication of Pseudomorphic High Electron Mobility Transistor (PHEMT) device widely,X-ray lithography is the best way to fabricate deep-submicron T-shaped structure,because it has many adantages,such as large process latitude、high throughput,extremely long depth of focus、large exposure field sizes,low cost,and so on,and the more important thing is that X-ray lithography technology is relatively mature.In this paper,the home-made X-ray mask process is introduced first,and the influence of blur to the light intensity distribution on the surface of X-ray resist is analyzed,the three layer resist method which is used for the fabrication of deep-submicron T-shaped structure and the 75nm T-shaped structure result which was achieved in BSRF 3B1A beamline are presented lastly.

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X-ray Lithography Technology for the Fabrication of Deep-submicron T-shaped Gate

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