Chinese Physics C > 2003, Vol. 27 > Issue(S1): 5-9

Experiment on Hard X-rays Damage Effects for Memory

Northwest Institute of Nuclear Technology,Xi'an 710024,China2 Institute of High Energy Physics,CAS,Beijing 100039,China

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Abstract：
Experimental results of X-rays dose enhancement effects are given for floating ROM and SRAM with different integration from 16k to 4M irradiated by 20—100keV X rays in Beijing Synchrotron Radiation Facility and by cobalt source γ-rays.The ratio of radiation damage to the them irradiated with two sources are measured.The relationship of radiation hardness of SRAM versus different integration for γ-rays irradiation and the damage threshold values of X-rays for SRAM with different integration are presented.

References

[1]

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GUO Hong-Xia, HAN Fu-Bin, CHEN Yu-Sheng, LUO Jian-Hui, GONG Jian-Cheng, XIE Ya-Ning, HUANG Yu-Ying, HE Wei and HU Tian-Dou. Experiment on Hard X-rays Damage Effects for Memory[J]. Chinese Physics C, 2003, 27(S1): 5-9.

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Received: 2003-11-21
Revised: 1900-01-01

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Experiment on Hard X-rays Damage Effects for Memory

Corresponding author:HAN Fu-Bin,

Northwest Institute of Nuclear Technology,Xi'an 710024,China2 Institute of High Energy Physics,CAS,Beijing 100039,China

Received Date:2003-11-21

Accepted Date:1900-01-01

Available Online:2003-01-02

Abstract:Experimental results of X-rays dose enhancement effects are given for floating ROM and SRAM with different integration from 16k to 4M irradiated by 20—100keV X rays in Beijing Synchrotron Radiation Facility and by cobalt source γ-rays.The ratio of radiation damage to the them irradiated with two sources are measured.The relationship of radiation hardness of SRAM versus different integration for γ-rays irradiation and the damage threshold values of X-rays for SRAM with different integration are presented.

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Experiment on Hard X-rays Damage Effects for Memory

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