Chinese Physics C > 2001, Vol. 25 > Issue(12): 1238-1244

Effects of Ion Irradiation on the Diffusion of Pre-implanted B Atoms in Crystalline Silicon

LIU Chang-Long^,

Institute of Modern Physics, The Chinese Academy of Sciences, Lanzhou 730000, China2 School of Electronic Engineering Information Technology & Mathematics, University of Surrey, GU2 7XH,Guildford, Surrey, UK

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Abstract：
N-type crystalline Si (100) implanted with 5keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO ₂layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code.

References

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LIU Chang-Long. Effects of Ion Irradiation on the Diffusion of Pre-implanted B Atoms in Crystalline Silicon[J]. Chinese Physics C, 2001, 25(12): 1238-1244.

LIU Chang-Long. Effects of Ion Irradiation on the Diffusion of Pre-implanted B Atoms in Crystalline Silicon[J]. Chinese Physics C, 2001, 25(12): 1238-1244. shu

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Received: 2001-02-09
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Effects of Ion Irradiation on the Diffusion of Pre-implanted B Atoms in Crystalline Silicon

LIU Chang-Long^,

Corresponding author:LIU Chang-Long,

Institute of Modern Physics, The Chinese Academy of Sciences, Lanzhou 730000, China2 School of Electronic Engineering Information Technology & Mathematics, University of Surrey, GU2 7XH,Guildford, Surrey, UK

Received Date:2001-02-09
Accepted Date:1900-01-01
Available Online:2001-12-05

Abstract:N-type crystalline Si (100) implanted with 5keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO₂layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code.