Chinese Physics C > 2008, Vol. 32 > Issue(S2): 251-254

Investigation of PL properties of C-doped SiO₂/Si samples after high energy Pb ion irradiation

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Abstract：
Amorphous SiO₂thin films with about 400—500 nm in thickness were thermally grown on single crystalline silicon. These SiO₂/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0×10¹⁷, 5.0×10¹⁷or 1.2×10¹⁸ions/cm², then irradiated at RT by 853 MeV Pb ions to 5.0×10¹¹, 1.0×10¹², 2.0×10¹²or 5.0×10¹²ions/cm², respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO₂films. For examples, 5.0×10¹²Pb-ions/cm²irradiation produced huge blue and green light-emitters in 2.0×10¹⁷C-ions/cm²implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0×10¹⁷carbon-ions/cm²implanted samples, 2.0×10¹²Pb-ions/cm²irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0×10¹²Pb-ions/cm²irradiation could create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2×10¹⁸carbon-ions/cm²implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type of SiO₂-based light-emission materials.

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[1]

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LIU Chun-Bao, WANG Zhi-Guang, ZANG Hang, WEI Kong-Fang, YAO Cun-Feng, SHENG Yan-Bin, MA Yi-Zhun, A Benyagoub, M Toulemonde and JIN Yun-Fan. Investigation of PL properties of C-doped SiO ₂/Si samples after high energy Pb ion irradiation[J]. Chinese Physics C, 2008, 32(S2): 251-254.

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Received: 2008-07-17
Revised: 1900-01-01

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Investigation of PL properties of C-doped SiO₂/Si samples after high energy Pb ion irradiation

Corresponding author:LIU Chun-Bao,

Received Date:2008-07-17

Accepted Date:1900-01-01

Available Online:2008-01-03

Abstract:Amorphous SiO₂thin films with about 400—500 nm in thickness were thermally grown on single crystalline silicon. These SiO₂/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0×10¹⁷, 5.0×10¹⁷or 1.2×10¹⁸ions/cm², then irradiated at RT by 853 MeV Pb ions to 5.0×10¹¹, 1.0×10¹², 2.0×10¹²or 5.0×10¹²ions/cm², respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO₂films. For examples, 5.0×10¹²Pb-ions/cm²irradiation produced huge blue and green light-emitters in 2.0×10¹⁷C-ions/cm²implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0×10¹⁷carbon-ions/cm²implanted samples, 2.0×10¹²Pb-ions/cm²irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0×10¹²Pb-ions/cm²irradiation could create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2×10¹⁸carbon-ions/cm²implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type of SiO₂-based light-emission materials.

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Investigation of PL properties of C-doped SiO₂/Si samples after high energy Pb ion irradiation

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