Chinese Physics C > 1993, Vol. 17 > Issue(S2): 101-109

Microstructure of Al/GaAs Interface Studied by Slow Positron Beam

1 Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui, China;
2 International Center for Materials Physics, Chinese Academy of Sciences, Shenyang, Liaoning, China;
3 Stnicture Research Laboratory, University of Science and Technology of China, Chinese Academy of Sciences, Hefei, Anhui, China;
4 Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, China;
5 CCAST(World Laboratory), Beijing, China

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The interface models were founded, and the expressions of the relation between Doppler broadening S-parameter and the implanted energy of positrons were got based on the diffusion equation of positrons. Interfaces formed between AI overlayer and the (110) surface of GaAs were studied with slow positron beam. We found the system of AI/GaAs interfaces could be well described by the perfectly absorbing linear interface model. From the results fitted by this model, we obtained the relation between the 5-parameter of the interface and the annealing temperatures or the overlayer thickness. The microstructure of interfaces and its dynamical characters were discussed.

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Weng Huimin, Zhou Xianyi, Xu Jihua, Sun Shijun, Zhu Jingsheng, Wu Shulan and Han Rongdian. Microstructure of Al/GaAs Interface Studied by Slow Positron Beam[J]. Chinese Physics C, 1993, 17(S2): 101-109.

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Received: 1992-07-13

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Supported by the National Natural Science Foundation of China and the Science Foundations of Structure Research Laboratory, University of Science and Technology of China and Ion Beam Laboratory, Shanghai Institute of Metallurgy, the Chinese Academy Sciences.

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沈阳化工大学材料科学与工程学院沈阳 110142

Microstructure of Al/GaAs Interface Studied by Slow Positron Beam

1 Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui, China;

2 International Center for Materials Physics, Chinese Academy of Sciences, Shenyang, Liaoning, China;

3 Stnicture Research Laboratory, University of Science and Technology of China, Chinese Academy of Sciences, Hefei, Anhui, China;

4 Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, China;

5 CCAST(World Laboratory), Beijing, China

Received Date:1992-07-13

Fund Project:Supported by the National Natural Science Foundation of China and the Science Foundations of Structure Research Laboratory, University of Science and Technology of China and Ion Beam Laboratory, Shanghai Institute of Metallurgy, the Chinese Academy Sciences.

Abstract:The interface models were founded, and the expressions of the relation between Doppler broadening S-parameter and the implanted energy of positrons were got based on the diffusion equation of positrons. Interfaces formed between AI overlayer and the (110) surface of GaAs were studied with slow positron beam. We found the system of AI/GaAs interfaces could be well described by the perfectly absorbing linear interface model. From the results fitted by this model, we obtained the relation between the 5-parameter of the interface and the annealing temperatures or the overlayer thickness. The microstructure of interfaces and its dynamical characters were discussed.

Microstructure of Al/GaAs Interface Studied by Slow Positron Beam

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