Chinese Physics C > 2000, Vol. 24 > Issue(5): 431-438

Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors

Department of Modern Physics, University of Science and Technology of China, Hefei 230027, China2 Institute of Microelectronic Technology, Shanghai Jiaotong University, Shanghai 200030, China

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Abstract：
Radiation hardness of a particle detector, double metal contact GaAs semiconductors has been investigated in 14 MeV neutron exposure. The leak current, the charge collection efficiency and the spectrum of MIPs are measured after 10 ¹²n/cm ²dose. The results are compared with ⁶⁰Co 1.25MeV γ photons radiation. The mechanism of radiation damage and the effect on time performances of GaAs detectors are discussed. A hypothesis of the active layer distribution of the GaAs detectors based on experiment data is given. The computation agrees with test results.

References

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LI Cheng, CHEN HongFang, WU Chong, ZHANG YongMing, XU ZiZong, LE Yi, SHAO ChuanFen and SHI ChangXin. Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors[J]. Chinese Physics C, 2000, 24(5): 431-438.

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Received: 1999-02-24
Revised: 1900-01-01

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors

Corresponding author:LI Cheng,

Department of Modern Physics, University of Science and Technology of China, Hefei 230027, China2 Institute of Microelectronic Technology, Shanghai Jiaotong University, Shanghai 200030, China

Received Date:1999-02-24

Accepted Date:1900-01-01

Available Online:2000-04-05

Abstract:Radiation hardness of a particle detector, double metal contact GaAs semiconductors has been investigated in 14 MeV neutron exposure. The leak current, the charge collection efficiency and the spectrum of MIPs are measured after 10¹²n/cm²dose. The results are compared with⁶⁰Co 1.25MeV γ photons radiation. The mechanism of radiation damage and the effect on time performances of GaAs detectors are discussed. A hypothesis of the active layer distribution of the GaAs detectors based on experiment data is given. The computation agrees with test results.

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Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors

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