Chinese Physics C > 2004, Vol. 28 > Issue(6): 626-628

Study of N⁺Implanted SiC Thin Films by FTIR and PL Spectroscopy

Institute of Modern Physics,The Chinese Academy of Sciences,Lanzhou 730000,China

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Abstract：
SiC films were deposited on Si substrates by RF co-sputtering of the Si and C compound target and implanted by 120keV N ions. The structure, optical property of thin films were studied by Fourier transform infrared spectrum(FTIR) and photoluminescence(PL) spectroscopy. The obtained results suggested that carbon nitride single, double and triple bonds are formed in the N ions implanted SiC films, and the luminescence intensity depends strongly on the quantity of N ions.

References

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SONG Yin, JIN Yun-Fan, WANG Zhi-Guang, ZHANG Chong-Hong, ZHAO Zhi-Ming and DUAN Jing-Lai. Study of N ⁺Implanted SiC Thin Films by FTIR and PL Spectroscopy[J]. Chinese Physics C, 2004, 28(6): 626-628.

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Received: 2003-11-11
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Study of N⁺Implanted SiC Thin Films by FTIR and PL Spectroscopy

Corresponding author:SONG Yin,

Institute of Modern Physics,The Chinese Academy of Sciences,Lanzhou 730000,China

Received Date:2003-11-11
Accepted Date:1900-01-01
Available Online:2004-06-05

Abstract:SiC films were deposited on Si substrates by RF co-sputtering of the Si and C compound target and implanted by 120keV N ions. The structure, optical property of thin films were studied by Fourier transform infrared spectrum(FTIR) and photoluminescence(PL) spectroscopy. The obtained results suggested that carbon nitride single, double and triple bonds are formed in the N ions implanted SiC films, and the luminescence intensity depends strongly on the quantity of N ions.