Chinese Physics C > 2005, Vol. 29 > Issue(S1): 32-36

Experimental studies on FeS₂films prepared on Si (100) substrates by synchrotron radiation surface X-ray diffraction method

Key Laboratory of Nuclear Analysis Techniques,Institute of High Energy Physics,CAS,Beijing 100049,China2 Beijing Synchrotron Radication Laboratory,Institute of High Energy Physics,CAS,Beijing 100049,China

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Abstract：
Both conventional X-ray diffraction (XRD) and synchrotron radiation surface X-ray diffraction methods were used to study FeS ₂films prepared by magnetron sputtering on Si (100) and glass substrates for comparison. The results show that the preferred orientation of FeS ₂along (311) direction, which might be due to the well-matched crystal lattice for FeS ₂and Si (100), is mistaken. The peak at about 56°with extremely strong intensity comes from the (311) crystal plane of the silicon substrate, other than the preferred orientation of FeS ₂. The conclusion is proved by both calculation and experimental measurements in present paper.

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ZHANG Hui, WANG Bao-Yi, ZHANG Zhe, WANG Ping, WEI Long, JIA Quan-Jie and WANG Yu-Zhu. Experimental studies on FeS ₂films prepared on Si (100) substrates by synchrotron radiation surface X-ray diffraction method[J]. Chinese Physics C, 2005, 29(S1): 32-36.

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Received: 2005-10-28
Revised: 1900-01-01

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Experimental studies on FeS₂films prepared on Si (100) substrates by synchrotron radiation surface X-ray diffraction method

Corresponding author:ZHANG Hui,

Key Laboratory of Nuclear Analysis Techniques,Institute of High Energy Physics,CAS,Beijing 100049,China2 Beijing Synchrotron Radication Laboratory,Institute of High Energy Physics,CAS,Beijing 100049,China

Received Date:2005-10-28

Accepted Date:1900-01-01

Available Online:2005-01-02

Abstract:Both conventional X-ray diffraction (XRD) and synchrotron radiation surface X-ray diffraction methods were used to study FeS₂films prepared by magnetron sputtering on Si (100) and glass substrates for comparison. The results show that the preferred orientation of FeS₂along (311) direction, which might be due to the well-matched crystal lattice for FeS₂and Si (100), is mistaken. The peak at about 56°with extremely strong intensity comes from the (311) crystal plane of the silicon substrate, other than the preferred orientation of FeS₂. The conclusion is proved by both calculation and experimental measurements in present paper.

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Experimental studies on FeS₂films prepared on Si (100) substrates by synchrotron radiation surface X-ray diffraction method

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