Chinese Physics C > 2005, Vol. 29 > Issue(11): 1112-1114

Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

Institute of Modern Physics,CAS,Lanzhou 730000,China

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Abstract：
In the present work the photoluminescence (PL)character of sapphire implanted with He ions and subsequently irradiated with ²⁰⁸Pb ²⁷⁺of 1.1MeV/u was studied. Sapphire single crystals were implanted with 110keV He ions at 600K temperature to fluences ranging from (0.5 to 2)×10 ¹⁷ions/cm ², some of them were subsequently irradiated with ²⁰⁸Pb ²⁷⁺.From experimental results we found PL spectra peaks at 375nm, 413nm, and 450nm, and it's intensity gets maximum at fluence of 5×10 ¹⁶He ions/cm ². Also we found a new peak at 390nm after subsequent ²⁰⁸Pb ²⁷⁺irradiation, which is possibly due to the crystallized sediment containing nano crystal Al ₂O ₃appeared on the sample surface.

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SONG Yin, ZHANG Cong-Hong, WANG Zhi-Guang, ZHAO Zhi-Ming, DUAN Jin-Lai and YAO Cun-Feng. Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation[J]. Chinese Physics C, 2005, 29(11): 1112-1114.

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Received: 2005-01-24
Revised: 1900-01-01

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

Corresponding author:SONG Yin,

Institute of Modern Physics,CAS,Lanzhou 730000,China

Received Date:2005-01-24

Accepted Date:1900-01-01

Available Online:2005-11-05

Abstract:In the present work the photoluminescence (PL)character of sapphire implanted with He ions and subsequently irradiated with²⁰⁸Pb²⁷⁺of 1.1MeV/u was studied. Sapphire single crystals were implanted with 110keV He ions at 600K temperature to fluences ranging from (0.5 to 2)×10¹⁷ions/cm², some of them were subsequently irradiated with²⁰⁸Pb²⁷⁺.From experimental results we found PL spectra peaks at 375nm, 413nm, and 450nm, and it's intensity gets maximum at fluence of 5×10¹⁶He ions/cm². Also we found a new peak at 390nm after subsequent²⁰⁸Pb²⁷⁺irradiation, which is possibly due to the crystallized sediment containing nano crystal Al₂O₃appeared on the sample surface.

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Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

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