Chinese Physics C > 2015, Vol. 39 > Issue(6): 066005 DOI: 10.1088/1674-1137/39/6/066005

Application of stratified implantation for silicon micro-strip detectors

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In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P ⁺region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.

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LI Hai-Xia, LI Zhan-Kui, WANG Fang-Cong, LI Rong-Hua, CHEN Cui-Hong, WANG Xiu-Hua, RONG Xin-Juan, LIU Feng-Qiong, WANG Zhu-Sheng, LI Chun-Yan, ZU Kai-Ling and LU Zi-Wei. Application of stratified implantation for silicon micro-strip detectors[J]. Chinese Physics C, 2015, 39(6): 066005. doi: 10.1088/1674-1137/39/6/066005

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Received: 2014-09-18
Revised: 1900-01-01

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Application of stratified implantation for silicon micro-strip detectors

Corresponding author:LI Hai-Xia,

Received Date:2014-09-18

Accepted Date:1900-01-01

Available Online:2015-06-05

Abstract:In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P⁺region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.

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Application of stratified implantation for silicon micro-strip detectors

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通讯作者:陈斌, bchen63@163.com

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