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Phonon contribution to nonionizing energy loss in silicon detectors

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Abstract：
Nonionizing energy loss (NIEL) has been applied to a number of studies concerning displacement damage effects in materials and devices. However, most studies consider only the contribution of displacement damage effects, neglecting the contribution from phonons. In this paper, a NIEL model, which considers the contribution of phonons, has been established using the Monte Carlo code SRIM. The maximum endurable fluence for silicon detectors has been estimated using the equivalent irradiation fluence compared with experimental data for the incident particles. NIEL is proportional to the equivalent irradiation fluence that the detector has received.

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LI Rong-Hua, LI Zhan-Kui, YANG Lei, LI Dong-Mei, LI Hai-Xia, WANG Zhu-Sheng, CHEN Cui-Hong, TAN Ji-Lian, LIU Feng-Qiong, RONG Xin-Juan, WANG Xiu-Hua, LI Chun-Yan, ZU Kai-Ling and LU Zi-Wei. Phonon contribution to nonionizing energy loss in silicon detectors[J]. Chinese Physics C, 2015, 39(6): 066004. doi: 10.1088/1674-1137/39/6/066004

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Received: 2014-09-16
Revised: 1900-01-01

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Phonon contribution to nonionizing energy loss in silicon detectors

Corresponding author:LI Zhan-Kui,

Received Date:2014-09-16

Accepted Date:1900-01-01

Available Online:2015-06-05

Abstract:Nonionizing energy loss (NIEL) has been applied to a number of studies concerning displacement damage effects in materials and devices. However, most studies consider only the contribution of displacement damage effects, neglecting the contribution from phonons. In this paper, a NIEL model, which considers the contribution of phonons, has been established using the Monte Carlo code SRIM. The maximum endurable fluence for silicon detectors has been estimated using the equivalent irradiation fluence compared with experimental data for the incident particles. NIEL is proportional to the equivalent irradiation fluence that the detector has received.

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Phonon contribution to nonionizing energy loss in silicon detectors

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