Chinese Physics C > 2010, Vol. 34 > Issue(3): 354-358 DOI: 10.1088/1674-1137/34/3/009

Properties study of ZnO:Ga crystal on pulsed radiation detections

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In this paper, properties on pulsed radiation detections of ZnO:Ga crystal grew by a magnetron sputtering method were studied. The time response to pulsed laser, pulsed hard X rays and single α particles, the energy response to pulsed hard X ray, the scintillation efficiency to γ rays, the response to pulsed proton, and the relations of the light intensity varied with the proton energy were measured and analyzed in detail. Results show that the ZnO:Ga crystal has potential applications in the regime of pulse radiation detection.

References

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MA Yan-Liang, OUYANG Xiao-Ping, ZHANG Jing-Wen, ZHANG Zhong-Bing, PAN Hong-Bo, CHEN Liang and LIU Lin-Yue. Properties study of ZnO:Ga crystal on pulsed radiation detections[J]. Chinese Physics C, 2010, 34(3): 354-358. doi: 10.1088/1674-1137/34/3/009

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Received: 2009-04-23
Revised: 2009-07-10

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沈阳化工大学材料科学与工程学院沈阳 110142

Properties study of ZnO:Ga crystal on pulsed radiation detections

Corresponding author:MA Yan-Liang,

Received Date:2009-04-23
Accepted Date:2009-07-10
Available Online:2010-03-05

Abstract:

In this paper, properties on pulsed radiation detections of ZnO:Ga crystal grew by a magnetron sputtering method were studied. The time response to pulsed laser, pulsed hard X rays and single α particles, the energy response to pulsed hard X ray, the scintillation efficiency to γ rays, the response to pulsed proton, and the relations of the light intensity varied with the proton energy were measured and analyzed in detail. Results show that the ZnO:Ga crystal has potential applications in the regime of pulse radiation detection.