Chinese Physics C > 2008, Vol. 32 > Issue(8): 645-648 DOI: 10.1088/1674-1137/32/8/011

Total dose radiation effects on SOI NMOS transistors with different layouts

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Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS) transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX) substrate and tested using 10keV X-ray radiation sources. The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×10⁶rad(Si). The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.

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. Schwank J R, Shaneyfelt M R, Dodd P E et al. IEEE Trans.Nucl. Sci., 2000, 47(6): 21752. HE Wei, ZHANG Zheng-Xuan, ZHANG En-Xia et al. Effect of Implanting Silicon in Buried Oxide on the Radiation Hardness of the Partially-Depleted CMOSSOI. In: TANGTing-Ao, RU Guo-Ping, JIANG Yu-Long ed. 2006 8th In-ternational Conference on Solid-State and Integrated Cir-cuit Technology Proceedings. Shanghai: Institute of Elec-trical and Electronics Engineers Press, 2006. 215-2173. HE Wei, ZHANG Zheng-Xuan, ZHANG En-Xia et al. HEP NP, 2007, 31(4): 388 (in Chinese)4. HE Wei, ZHANG Zheng-Xuan, ZHANG En-Xia et al. Reducing Back Channel Threshold Voltage Shifts of Partially Depleted SOI by Si Ion Implantation. In: Toshiro Hiramotoed. 2006 IEEE International SOI Conference Proceedings.New York: Institute of Electrical and Electronics Engineers Press, 2006. 61-625. Ferlet-Cavrois V, Colladant T, Paillet P et al. IEEE Trans.Nucl. Sci., 2000, 47(6): 21836. YU Wen-Jie, ZHANG Zheng-Xuan et al. HEP NP, 2007,31(9): 819 (in Chinese)7. LIU S T, Balster S, Sinha S et al. IEEE Trans. Nucl. Sci.,1999, 46(6): 18178. Lascoe R C, Osborn J V, Mayer D C et al. Total-dose Tolerance of the Commercial Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 m CMOS Process. In:IEEE Nuclear and Plasma Sciences Society ed. IEEE 2001 Radiation Effects Data Workshop Record. Vancouver: Institute of Electrical and Electronics Engineers Press, 2001.72-769. Milanowski R J, Pagey M P, Massengill L W et al. IEEETrans. Nucl. Sci., 1998, 45(6): 259310. Chan T Y, CHEN J et al. The Impact of Gate-Induced Drain Leakage Current on MOSFET Scaling. In: Electron Devices Society of IEEE ed. Proceedings of the IEEE 1987 International Electron Devices Meeting. New York: Insti-tute of Electrical and Electronics Engineers Press, 1987.718-721

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TIAN Hao, ZHANG Zheng-Xuan, HE Wei, YU Wen-Jie, WANG Ru and CHEN Ming. Total dose radiation effects on SOI NMOS transistors with different layouts[J]. Chinese Physics C, 2008, 32(8): 645-648. doi: 10.1088/1674-1137/32/8/011

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Received: 2007-10-08
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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Total dose radiation effects on SOI NMOS transistors with different layouts

Corresponding author:TIAN Hao,

Received Date:2007-10-08

Accepted Date:2007-11-02

Available Online:2008-08-05

Abstract:

Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS) transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX) substrate and tested using 10keV X-ray radiation sources. The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×10⁶rad(Si). The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.

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Total dose radiation effects on SOI NMOS transistors with different layouts

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通讯作者:陈斌, bchen63@163.com

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