Chinese Physics C > 2008, Vol. 32 > Issue(5): 389-392 DOI: 10.1088/1674-1137/32/5/013

Production of highly charged argon ions from a room temperature electron beam ion trap

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Abstract：

In this work, highly charged ions have been extracted from the advanced Electron Beam Ion Source (EBIS-A) developed in a scientific cooperation between the Dresden University of Technology and the DREEBIT GmbH Dresden. The charge state distributions of ions extracted from the EBIS-A are measured in the pulse and leaky modes under different operation conditions. Ar¹⁶⁺ions with current of 2 pA are produced and extracted in the leaky mode. 3×10⁵Ar¹⁸⁺ions per pulse are extracted in the pulse mode. The ion charge state distribution is a
function of the ionization time.

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WANG Tie-Shan, PENG Hai-Bo, Ovsyannikov V, Kentsch U, Ullmann F, CHENG Rui and Zschornack G. Production of highly charged argon ions from a room temperature electron beam ion trap[J]. Chinese Physics C, 2008, 32(5): 389-392. doi: 10.1088/1674-1137/32/5/013

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Received: 2007-07-19
Revised: 2007-11-20

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Production of highly charged argon ions from a room temperature electron beam ion trap

Corresponding author:PENG Hai-Bo,

Received Date:2007-07-19

Accepted Date:2007-11-20

Available Online:2008-05-05

Abstract:

In this work, highly charged ions have been extracted from the advanced Electron Beam Ion Source (EBIS-A) developed in a scientific cooperation between the Dresden University of Technology and the DREEBIT GmbH Dresden. The charge state distributions of ions extracted from the EBIS-A are measured in the pulse and leaky modes under different operation conditions. Ar¹⁶⁺ions with current of 2 pA are produced and extracted in the leaky mode. 3×10⁵Ar¹⁸⁺ions per pulse are extracted in the pulse mode. The ion charge state distribution is a
function of the ionization time.

Production of highly charged argon ions from a room temperature electron beam ion trap

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通讯作者:陈斌, bchen63@163.com

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Production of highly charged argon ions from a room temperature electron beam ion trap

Corresponding author:PENG Hai-Bo,

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