Chinese Physics C > 2005, Vol. 29 > Issue(S1): 116-119

Transformations of Amorphous Silica under High Pressure and High Temperature

Guangzhou Institute of Geochemistry,Chinese Academy of Sciences,Guangzhou 510640,China2 Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China3 Institute of Geochemistry,Chinese Academy of Sciences,Guiyang 550002,China

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Abstract：
Aimed at the transformation methods and mechanism of amorphous silica on the conditions of high pressure and high temperature, we used the Changbaishan diatomite, which had been heating treated at 700°C, as the sample of amorphous silica, to carried out the in situ high pressure and high temperature synchrotron X-ray diffraction determinations (EDXD method) in the range of pressure of 0—4GPa and temperature of 1000—1300K by the diamond anvil cell apparatus and double-sided laser heating technique. The experimental results indicate that amorphous silica transform to α-quartz, but not β-quartz and cristobalite in the range of pressure of 0.8—2.4GPa and temperature of 1000—1300K. The crystalline temperature of amorphous silica under high pressure is much lower than that of ambient condition.The resluts means that the pressure is favored to low the activation energy of amorphous transform to crystalline phases,and would change the metastable phase transformation mechanism,leading to the different crystalline phases. In the range of pressure of 3—4GPa and temperature at 1300K, both amorphous silica and quartz transform to coesite.

References

[1]

. Wright A C. J. Non-cryst. Solids, 1994, 179: 84—1152. KeenD A, Dove M T. J Phys: Condensed Matter, 1999,11: 9263—92733. Sigaev V N, Smelyanskaya E N, Plotnichenko V G et al. J.Non-cryst. Solids, 1999, 248: 141—1464. XIAO Wan-Sheng, PENG Wen-Shi, WANG Guan-Xin etal. Spectroscopy and Spectral Analysis, 2004, 24: 690—693(in Chinese)(肖万生，彭文世，王冠鑫等.光谱学与光谱分析,2004. 24:690-693)5. Darling R S, Chou I M, Bodnar R J. Science, 1997, 276:91—936. Baxter P J, Bonadonna C, Dupree R et al. Science, 1999,283: 1142—11457. Santa D A, Mathew G, Khadkikar A S et al. CretaceousResearch, 2003, 24: 105—1108. Birch F, Geophys J. Res., 1986, 91: 4949—49549. Boehler R. Rev. Geophys., 2000, 38: 221—24510. Ghiribelli B, Frezzotti M L, Palmeri R. Eur. J. Mineral.,2002, 14: 355—360

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XIAO Wan-Sheng, LI YAN, LIU Jing, WENG Ke-Nan and XIE Hong-Sen. Transformations of Amorphous Silica under High Pressure and High Temperature[J]. Chinese Physics C, 2005, 29(S1): 116-119.

XIAO Wan-Sheng, LI YAN, LIU Jing, WENG Ke-Nan and XIE Hong-Sen. Transformations of Amorphous Silica under High Pressure and High Temperature[J]. Chinese Physics C, 2005, 29(S1): 116-119. shu

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Received: 2005-10-31
Revised: 1900-01-01

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Transformations of Amorphous Silica under High Pressure and High Temperature

Corresponding author:XIAO Wan-Sheng,

Guangzhou Institute of Geochemistry,Chinese Academy of Sciences,Guangzhou 510640,China2 Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China3 Institute of Geochemistry,Chinese Academy of Sciences,Guiyang 550002,China

Received Date:2005-10-31

Accepted Date:1900-01-01

Available Online:2005-01-02

Abstract:Aimed at the transformation methods and mechanism of amorphous silica on the conditions of high pressure and high temperature, we used the Changbaishan diatomite, which had been heating treated at 700°C, as the sample of amorphous silica, to carried out the in situ high pressure and high temperature synchrotron X-ray diffraction determinations (EDXD method) in the range of pressure of 0—4GPa and temperature of 1000—1300K by the diamond anvil cell apparatus and double-sided laser heating technique. The experimental results indicate that amorphous silica transform to α-quartz, but not β-quartz and cristobalite in the range of pressure of 0.8—2.4GPa and temperature of 1000—1300K. The crystalline temperature of amorphous silica under high pressure is much lower than that of ambient condition.The resluts means that the pressure is favored to low the activation energy of amorphous transform to crystalline phases,and would change the metastable phase transformation mechanism,leading to the different crystalline phases. In the range of pressure of 3—4GPa and temperature at 1300K, both amorphous silica and quartz transform to coesite.

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