Chinese Physics C > 2003, Vol. 27 > Issue(S1): 49-52

Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction

Institute of High Energy Physics,CAS,Beijing 100039,China2 Surface Physics National Key Lab.,Fudan Univeresity,Shanghai 200433,China

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Abstract：
The microstructure and morphology of Ge quantum dots grown on Si(001) with varied coverage of Si caplayer has been studied by grazing incident eiffraction (GID) and atomic force microscpe(AFM) respectively.It is found that the composition as well as the morphology varies obviously with small change of coverage of Si caplayer.

References

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HE Qing, JIA Quan-Jie, JIANG Xiao-Ming, CUI Jian and JIANG Zui-Min. Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction[J]. Chinese Physics C, 2003, 27(S1): 49-52.

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Received: 2003-11-21
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction

Corresponding author:HE Qing,

Institute of High Energy Physics,CAS,Beijing 100039,China2 Surface Physics National Key Lab.,Fudan Univeresity,Shanghai 200433,China

Received Date:2003-11-21
Accepted Date:1900-01-01
Available Online:2003-01-02

Abstract:The microstructure and morphology of Ge quantum dots grown on Si(001) with varied coverage of Si caplayer has been studied by grazing incident eiffraction (GID) and atomic force microscpe(AFM) respectively.It is found that the composition as well as the morphology varies obviously with small change of coverage of Si caplayer.