Chinese Physics C > 2006, Vol. 30 > Issue(11): 1088-1090

Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs

Shanghai Applied Radiation Institute, Shanghai University, Shanghai 201800, China2 China Institute of Atomic Energy, Beijing 102413, China

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Abstract：
The displacement damage effects due to Non-ionizing Energy Loss (NIEL) is one reason of device-malfunction in Space. The NIEL induced by proton with energies from 10MeV to 400MeV in Si and GaAs have been calculated using updated Monte-Carlo code SHIELD.

References

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LUO Wen-Yun, WANG Chao-Zhuang, HE Xin-Fu, FAN Sheng, HUANG Xiao-Long and WANG Chuan-Shan. Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs[J]. Chinese Physics C, 2006, 30(11): 1088-1090.

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Received: 2006-01-24
Revised: 2006-05-26

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1.
沈阳化工大学材料科学与工程学院沈阳 110142

Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs

Corresponding author:HE Xin-Fu,

Shanghai Applied Radiation Institute, Shanghai University, Shanghai 201800, China2 China Institute of Atomic Energy, Beijing 102413, China

Received Date:2006-01-24
Accepted Date:2006-05-26
Available Online:2006-11-05

Abstract:The displacement damage effects due to Non-ionizing Energy Loss (NIEL) is one reason of device-malfunction in Space. The NIEL induced by proton with energies from 10MeV to 400MeV in Si and GaAs have been calculated using updated Monte-Carlo code SHIELD.