Chinese Physics C > 2003, Vol. 27 > Issue(6): 526-531

Study on Irradiation Damage of Bi-Doped PbWO₄Crystal

Department of Physics,Tongji University,Shanghai 200092,China2 Laboratory of Functional Inorganic Materials,Chinese Academy of Sciences,Shanghai 200050,China3 Shanghai Key Laboratory of Metal-Functional Materials,Shanghai 200940,China

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Abstract：
The luminescence and point defects of pure lead tungstate crystals (PbWO ₄) and Bismuth (Bi) doping crystal (PbWO ₄:Bi)grown by modified Bridgman method are studied. It is found that irradiation results in the great change of the transmission and X-ray excited emission after γ-ray irradiation about 4 Mrad dose. The defects in PbWO ₄crystal have been studied by means of positron annihilation lifetime and X-ray photoelectron spectra. The results show that Bi dopant suppresses the concentrations of positron capture centers and low-valent oxygen ions.After γ-ray irradiation,in the pure crystal the concentration of lead vacancy (V _Pb) is decreased and that of low-valent oxygen increased; on the contrary,in Bi dopant crystal the concentrations of positron capture centers increased and that of low-valent oxygen ions suppressed. It is tentatively proposed that Bi ³⁺dopants would mainly occupy the sites of lead vacancies resulted from Pb volatilization. And irradiation changes the chemical valence of Bi element,which is Bi ³⁺→Bi ⁵⁺.The Bi ⁵⁺will replace the lattice W ⁶⁺ions and it will cause some (WO ₄) ^2－replaced by (BiO ₃+V _O) ^－.

References

[1]

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LIANG Ling, GU Mu, DUAN Yong, MA Xiao-Hui, LIU Feng-Song, WU Xiang-Hui, QIU Long-Qing, CHEN Ming-Nan, LIAO Jing-Ying, SHEN Ding-Zhong, ZHANG Xin, GONG Bo, XUE Xuan-Ping, Study on Irradiation Damage of Bi-Doped PbWO ₄Crystal[J]. Chinese Physics C, 2003, 27(6): 526-531.

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Received: 2002-11-15
Revised: 1900-01-01

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Study on Irradiation Damage of Bi-Doped PbWO₄Crystal

Corresponding author:GU Mu,

Department of Physics,Tongji University,Shanghai 200092,China2 Laboratory of Functional Inorganic Materials,Chinese Academy of Sciences,Shanghai 200050,China3 Shanghai Key Laboratory of Metal-Functional Materials,Shanghai 200940,China

Received Date:2002-11-15

Accepted Date:1900-01-01

Available Online:2003-06-05

Abstract:The luminescence and point defects of pure lead tungstate crystals (PbWO₄) and Bismuth (Bi) doping crystal (PbWO₄:Bi)grown by modified Bridgman method are studied. It is found that irradiation results in the great change of the transmission and X-ray excited emission after γ-ray irradiation about 4 Mrad dose. The defects in PbWO₄crystal have been studied by means of positron annihilation lifetime and X-ray photoelectron spectra. The results show that Bi dopant suppresses the concentrations of positron capture centers and low-valent oxygen ions.After γ-ray irradiation,in the pure crystal the concentration of lead vacancy (V_Pb) is decreased and that of low-valent oxygen increased; on the contrary,in Bi dopant crystal the concentrations of positron capture centers increased and that of low-valent oxygen ions suppressed. It is tentatively proposed that Bi³⁺dopants would mainly occupy the sites of lead vacancies resulted from Pb volatilization. And irradiation changes the chemical valence of Bi element,which is Bi³⁺→Bi⁵⁺.The Bi⁵⁺will replace the lattice W⁶⁺ions and it will cause some (WO₄)^2－replaced by (BiO₃+V_O)^－.

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Study on Irradiation Damage of Bi-Doped PbWO₄Crystal

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