Chinese Physics C > 2001, Vol. 25 > Issue(4): 365-370

Simulation of Energy Deposition of Protons and 1MeV Neutrons in Silicon

Microelectronics Institute, Xidian University, Xi'an 710071, China2 Northwest Institute of Nuclear Technology, Xi'an 710024, China

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Abstract：
Based on existing cross-section data and general theories, a Monte Carlo computer program named NEUTRON for calculating non-ionizing energy loss (NIEL) and ionizing energy loss (IEL) of neutrons in materials was written. The amount of IEL & NIEL and their distributions irradiation induced by 1MeV neutrons and protons in common semiconductor material Si were calculated with NEUTRON and introduced TRIM95, respectively. These results were analyzed and compared with literatures.

References

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. Summers G P et al. Damage Correlations in Semi conductors Exposed to Gamma, Electron and Proton Radiations IEEE Trans. on Nucl. Sci. 1993, 40(6):1372-13792. MCNP-A General Monte Carlo Particle Transport Code, version 4b the Radiation Safety Information Computational Center (RSICC). 1997 3. Ziegler J F et al. The Stopping and Range of Ionsin Solids, Volume 1. New York: Pergammon Press, 1985 4. Srour J R et al. Damage Mechanisms in Radiation Tolerant Amorphous Silicon Solar Cells. IEEE Trans. on Nucl. Sci., 1998, 45(6): 2624-26315. Summers G P et al. Correlation of Particle Induced Displacement Damagein Silicon. IEEE Trans. on Nucl. Sci., 1987, 34(6): 1134-11396. Wood S et al. Simulation of Radiation Damage in Solids. IEEE Trans. on Nucl. Sci., 1981, 28(6): 4107-4112

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CHEN Shi-Bin, ZHANG Yi-Men, CHEN Yu-Sheng, HUANG Liu-Xing and ZHANG Yu-Ming. Simulation of Energy Deposition of Protons and 1MeV Neutrons in Silicon[J]. Chinese Physics C, 2001, 25(4): 365-370.

CHEN Shi-Bin, ZHANG Yi-Men, CHEN Yu-Sheng, HUANG Liu-Xing and ZHANG Yu-Ming. Simulation of Energy Deposition of Protons and 1MeV Neutrons in Silicon[J]. Chinese Physics C, 2001, 25(4): 365-370. shu

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Received: 2000-03-16
Revised: 1900-01-01

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1.
沈阳化工大学材料科学与工程学院沈阳 110142

Simulation of Energy Deposition of Protons and 1MeV Neutrons in Silicon

Corresponding author:CHEN Shi-Bin,

Microelectronics Institute, Xidian University, Xi'an 710071, China2 Northwest Institute of Nuclear Technology, Xi'an 710024, China

Received Date:2000-03-16
Accepted Date:1900-01-01
Available Online:2001-04-05

Abstract:Based on existing cross-section data and general theories, a Monte Carlo computer program named NEUTRON for calculating non-ionizing energy loss (NIEL) and ionizing energy loss (IEL) of neutrons in materials was written. The amount of IEL & NIEL and their distributions irradiation induced by 1MeV neutrons and protons in common semiconductor material Si were calculated with NEUTRON and introduced TRIM95, respectively. These results were analyzed and compared with literatures.