Chinese Physics C > 2008, Vol. 32 > Issue(6): 442-445 DOI: 10.1088/1674-1137/32/6/006

A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

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Abstract：

The 9 and 12MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×10⁹to 4×10×10cm^－2and 1×10⁹to 2×1012cm^－2have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12~MeV protons are about 4×10¹⁰and 2×10¹²cm^－2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.

References

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. Dyer C S, Sanderson C, Mugford R et al. IEEE Trans. Nucl.Sci., 2000, 47: 481-4852. Eid E S, Chan T Y, Fossum E R et al. IEEE Trans. Nucl.Sci., 2001, 48: 1796-18063. Bogaerts J, Dierickx B, Mertens R. IEEE Trans. Nucl. Sci.,2002, 49: 1513-15214. MENG Xiang-Ti, KANG Ai-Guo. Study of -Ray Radiation Damage in CMOS Image Sensors, Proc. Chinese Nuclear Society Conf., Wuhan, 2001. 671-673 (in Chinese)5. MENG Xiang-Ti, KANG Ai-Guo. Rare Metals, 2002,21(1): 79-846. MENG Xiang-Ti, KANG Ai-Guo, YOU Zheng. Jpn. J.Appl. Phys., 2002, 41(8B): L919-9217. MENG Xiang-Ti, KANG Ai-Guo, WANG Xing-Yu et al.Semicond. Sci. Technol., 2003, 18: L1-38. HUANG Qiang, MENG Xiang-Ti. Chinese Physics Letters,2007, 24-2: 549-5519. CHEN D T, Fremont C A. Active Pixel with a Pinned Photodiode, 1999, U.S. Patent 588049510. Hopkinson G R. IEEE Trans. Nucl. Sci., 1992, 39-6:2018-2025

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MENG Xiang-Ti, HUANG Qiang, MA Yan-Xiu, ZHENG Yong-Nan, FAN Ping and ZHU Sheng-Yun. A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation[J]. Chinese Physics C, 2008, 32(6): 442-445. doi: 10.1088/1674-1137/32/6/006

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Received: 2007-09-10
Revised: 2007-12-02

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通讯作者:陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

Corresponding author:ZHU Sheng-Yun,

Received Date:2007-09-10
Accepted Date:2007-12-02
Available Online:2008-06-05

Abstract:

The 9 and 12MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×10⁹to 4×10×10cm^－2and 1×10⁹to 2×1012cm^－2have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12~MeV protons are about 4×10¹⁰and 2×10¹²cm^－2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.