BEGIN:VCALENDAR VERSION:2.0 PRODID:-//CERN//INDICO//EN BEGIN:VEVENT SUMMARY:EPD Seminar DTSTART:20261019T010000Z DTEND:20261019T040000Z DTSTAMP:20261105T114600Z UID:indico-event-31121@indico.ihep.ac.cn DESCRIPTION:Title: Compensated LGAD sensors for extreme radiation environm ents Abstract: Silicon sensors have been extensively exploited in high-en ergy physics experiments in the past 40 years\, from their first use in NA 11 at the SPS (CERN) to their application in the present-day design of ver y large particle trackers. The capability of silicon sensors to work in en vironments with high radiation levels has been of utmost importance for ex periments at accelerating machines with very energetic and intense particl e beams. Presently available silicon sensors can operate efficiently up to particle fluences of 2×1016 particles/cm2\, while future frontier accele rators envisage the use of silicon sensors in environments with fluences e xceeding 5×1017 particles/cm2. If not overcome\, this gap will prevent th e use of silicon sensors in future hadron-collider experiments. The develo pment aims at (i) understanding and modelling the mechanisms of radiation damage up to the fluence of 5E17/cm2 and (ii) designing\, producing\, and testing an innovative type of silicon sensor able to operate efficiently u p to that fluence value. The innovative sensor design relies on the use of a thin active bulk\, 20–40 μm\, coupled with the mechanism of internal gain of 10–20 that will generate signals large enough to ensure detecti on up to the highest fluence. This breakthrough will become possible thank s to a new design of the implant responsible for signal multiplication\, o btained by the compensation of p- and n-type dopants. The results already achieved and the steps envisaged up to the target accomplishment will be p resented and discussed. About the speaker: Valentina Sola am an experimen tal physicist working in the field of high-energy particle physics. She ha s worked at the HERA ep collider at DESY within the ZEUS Collaboration\, a nd now she is a member of the CMS Collaboration at the Large Hadron Collid er at CERN. Presently\, she is involved in the development of new silicon sensors and their design\, and participates in the construction of the MIP Timing Detector for the CMS Experiment. Valentina Sola was the Principal Investigator diverse projects to investigate the usage of thin sensors wit h internal gain for extreme fluence environments\, as the INFN Project for Young Researchers Silicon Sensor for Extreme Fluences (eXFlu)\, the AIDAi nnova Blue Sky Project Thin Silicon Sensor for Extreme Fluences (eXFlu-inn ova)\, and of A Compensated Design of Thin Silicon Sensors for Extreme Flu ences (ComonSens)\, funded by the Italian Minister of University and resea rch. Now she is the PI of an ERC Consolidator Grant on Doping Compensation in Thin Silicon Sensors: the pathway to Extreme Radiation Environments (C ompleX). Title: Radiation damage effects on the gain region in Silicon an d 4H-SiC Low Gain Avalanche Diodes (LGADs) Abstract: Over the past decade \, the search for 4D (resolvable in both time and space) detectors with hi gh radiation hardness and robustness has been one of the major challenges in experimental high-energy physics. Radiation-induced doping removal in t he gain implant is one of the main limitations to the long-term operation of Low-Gain Avalanche Diodes (LGADs) in harsh radiation environments. In t his contribution\, a novel methodology for quantifying doping removal by a nalyzing irradiation-induced variations in sheet resistance measured with van der Pauw test structures will be presented. Validation is performed th rough TCAD simulations calibrated with Secondary Ion Mass Spectrometry (SI MS)\, demonstrating a nearly two-fold faster removal of donors compared to acceptors. Moreover\, the demand for radiation-hard 4D detectors capable of simultaneous high-precision timing and spatial resolution is driving th e investigation of 4H-Silicon Carbide (4H-SiC) as a robust alternative to silicon. In the second part of this contribution an extensive performance evaluation of 4H-SiC LGADs and PN junction diodes fabricated by Onsemi on 6-inch wafers (50 µm epitaxial layer\, doping of the order of 5×1013 cm- 3) will be presented. The devices were subjected to 23 MeV proton irradiat ion\, covering five fluences from 1×1014 p/cm2 to 2×1015 p/cm2. They hav e been characterized in terms of I-V\, C-V\, TCT and beta measurements. Ef fect of temperature up to 200°C on I-V\, C-V and up to 50-60°C on beta a nd TCT measurements will be shown to study and investigate the defect dyna mic as a function of temperature. About the speaker: Francesco Moscatelli received his M.Sc. in Physics (2000) and Ph.D. in Information Engineering (2003) from the University of Perugia\, Italy. He worked at IMM-CNR\, Bol ogna\, from 2009 to 2017 and has been a Researcher at IOM-CNR\, Perugia\, since 2017. His research focuses on the design\, simulation\, fabrication\ , and characterization of semiconductor devices for particle detection and power electronics\, particularly silicon and silicon carbide technologies . His work includes SiC particle detectors\, 4H-SiC MOSFETs\, SPADs\, sili con nanowires\, and LGADs. Since 2014\, he has contributed to the CMS Phas e-2 upgrade\, overseeing process quality control for Outer Tracker silicon sensors. He has coordinated several national and international projects\, including the PRIN projects 4DInSiDe\, ComonSens\, and HiEnD\, and served as INFN Perugia CMS Local Coordinator (2019–2023) and AIDAinnova Local Coordinator (2021–2025). Since 2026\, he has coordinated the INFN nation al project SiC_4Gain on ion-implanted 4H-SiC LGADs. Dr. Moscatelli has co- authored more than 600 publications. His current research interests includ e radiation detectors\, silicon and SiC devices\, TCAD simulation\, radiat ion effects\, and advanced semiconductor technologies for high-energy phys ics. zoom meeting ID: 9750 1431 568 password: 261019\n\nhttps://indico.i hep.ac.cn/event/31121/ LOCATION:122 (多学科大楼) URL:https://indico.ihep.ac.cn/event/31121/ END:VEVENT END:VCALENDAR

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