5–10 Nov 2025
Guangzhou Dongfang Hotel
Asia/Shanghai timezone

Irradiation study of COFFEE2 chips

Not scheduled
20m
Hallway (8th Floor)

Hallway

8th Floor

Poster 12: Silicon Detector Poster

Speaker

天宇 史(高能所)

Description

This work presents the first irradiation assessment of a pixel sensor prototype (COFFEE2) fabricated in the 55nm HV-CMOS process, targeted for the high-radiation environment of the LHCb Upgrade II. The study focuses on the KIT array within COFFEE2, which features a complete readout system. Protons were used to irradiate chips to fluences up to 1×10¹⁴ n_eq/cm² at room temperature and 7×10¹⁴ n_eq/cm² at -28°C. Post-irradiation measurements show a manageable increase in leakage current. The chip remained functional with high hit efficiency even at 10¹⁴ n_eq/cm², though a reduction in pixel response uniformity was observed. Higher depletion bias was found to mitigate performance loss. The results demonstrate the strong radiation tolerance of the 55nm HV-CMOS technology, validating its promise for future particle tracking detectors requiring micrometer spatial resolution and nanosecond timing。

Primary authors

Hui Zhang Mingjie Feng(IHEP) UNKNOWN 徐子骏 天宇 史(高能所) Yiming 一鸣 Li 李(IHEP) Zhiyu Xiang 程 曾( )

Presentation materials

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