- [1]
C. J. Hailey, H. J. An, K. L. Blaedel et al, Proc. SPIE, 7732-28(2010)
- [2]
Y. Soong, T. Okajima, P. J. Serlemitsos et al, Proc. SPIE, 9144:914428(2014)
- [3]
M. Bavdaz, E. Wille, M. Ayre et al, Proc. SPIE, 10399:103990B (2017)
- [4]
S.N. Zhang, M. Feroci, A. Santangelo et al, Proc. SPIE, 9905:99051Q-1(2016)
- [5]
W.M. Yuan, C. Zhang, Y. Chen et al, Sci Sin-Phys Mech Astron, 48:039502(2018)
- [6]
S. L. O'Dell, R. Allured, A. O. Ames et al., Proc. SPIE, 9965:996507(2016)
- [7]
K.W. Chan, W. W. Zhang, M. J. Schofield et al, Proc. SPIE, 9905:99056X (2016)
- [8]
H. J. An, F. E. Christensen, M. Doll et al, Proc. SPIE, 7437:74371J-1(2009)
- [9]
M.Tolan, In Springer Tracts in Modern Physics, Vol. 148, (Berlin:Springer, 1999)
- [10]
K. Boller, R.-P. Haelbich, H. Hogrefe et al, Nucl. Instrum. Methods A, 208:273-279(1983)
- [11]
Q. S. Huang, H. C. Li, Z. Q. Song et al, Chin. Phys. C, 37(2):028002(2013)
- [12]
I. V. Kozhevnikov, A. V. Buzmakov, F. Siewert et al, J. Synchr. Rad., 23:78-90(2009)
- [13]
J. Chen, E. Louis, C. J. Lee et al, Opt. Express, 17:16969-16979(2009)
- [14]
Q. S. Huang, V. Medvedev, R. van de Kruijs et al, Appl. Phys. Rev., 4:011104(2017)
- [15]
R. Bouwman, J. B. van Mechelen, A. A. Holscher, In Surface Contamination. Genesis, Detection, and Control, Vol. 1, (Plenum Press, NY), 87-296(1978)
- [16]
H. B. Bonham, P. V. Plunkett, In Surface Contamination. Genesis, Detection, and Control, Vol. 1, (Plenum Press, NY), 271-285(1978)
- [17]
I. V. Kozhevnikov, E. O. Filatova, A. A. Sokolov et al, J. Synchrotron Rad., 22:348-353(2015)
- [18]
Y. O. Volkov, I. V. Kozhevnikov, B. S. Roshchin et al, Crystallogr. Rep., 58:160-167(2013)
- [19]
E. O. Filatova, I. V. Kozhevnikov, A. A. Sokolov et al, Sci. Technol. Adv. Mater., 13:015001-12(2012)
- [20]
K. L. Mittal, ed, In Surface Contamination. Genesis, Detection, and Control, Vol. 1., (Plenum Press, NY, 1978)
- [21]
S. Ma, M. W. Wen, Z. S. Wang, Chin. Phys. C, 40(7):079001(2016)
- [22]
F. F. Wang, J. T. Zhu, Q. Zhong et al, Chin. Phys. C, 36(9):909-914(2012)
- [23]
E. O. Filatova, A. A. Sokolov, I. V. Kozhevnikov, Chapter 7 in the book High-k Gate Dielectrics for SMOS Technology. Gang He, Ed. Wiley-VCH Verlag, (Weinhem, Germany), 225-271(2012)
- [24]
P. B. Adams, In Surface Contamination. Genesis, Detection, and Control, Vol. 1., (Plenum Press, NY), 327-338(1978)
- [25]
R. Conradt, J. Am. Ceram. Soc., 91:728-735(2008)
- [26]
L. L. Hench, E. C. Ethridge, In Surface Contamination. Genesis, Detection, and Control, Vol. 1, (Plenum Press, NY), 313-326(1978)
- [27]
I.V. Kozhevnikov, Nucl. Instrum. Methods A, 508:519-541(2003)
- [28]
I.V. Kozhevnikov, L. Peverini, and E. Ziegler, Phys. Rev. B, 85:125439(2012)
- [29]
I. V. Kozhevnikov, Crystallogr. Rep., 57:490-498(2012)
- [30]
M. W. Wen, I.V. Kozhevnikov, Z. S. Wang, Opt. Express, 23:24220-24235(2015)
- [31]
I. V. Kozhevnikov, L. Peverini, E. Ziegler, Opt. Express, 14:144-149(2008)
- [32]
I. V. Kozhevnikov, L. Peverini, E. Ziegler, J. Appl. Phys., 104:054914(2008)
- [33]
D. Attwood, In Soft X-Rays and Extreme Ultraviolet Radiation:Principles and Applications, Cambridge University Press, Cambridge, UK, 1999